LC898123AXD

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8

Electrical Characteristics

Logic

Parameter

Symbol

Conditions

Ratings

Unit

Power supply voltage

VAD30 max

Ta ≤ 25

C

0.3 to 4.6

V

Input/Output voltage

VAI30, VAO30

Ta ≤ 25

C

0.3 to VAD30+0.3

V

VDI30, VDO30

Ta ≤ 25

C

0.3 to VAD30+0.3

V

Storage temperature

Tstg

55 to 125

C

Operating temperature

Topr

30 to 85

C

3.0V Power Supply (AVDD30)

Parameter

Symbol

Min

Typ

Max

Unit

Power supply voltage

VAD30

2.6

2.8

3.6

V

Input voltage range

VIN

0

-

VAD30

V

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Applicable I/O

High-level input voltage

VIH

CMOS

schmitt

1.48

V

3IS, 3ISUD,

3ISD

Low-level input voltage

VIL

0.37

V

High-level input voltage

VIH

CMOS

supported

1.40

3IC, 3ICUD,

3ICD

Low-level input voltage

VIL

0.51

V

High-level output

voltage

VOH

IOH=

2mA

AVDD30

0.4

V

3O2, 3T2

Low-level output

voltage

VOL

IOL= 2mA

0.4

V

Low-level output

voltage

VOL

IOL= 2mA

0.2

V

3OD

Analog input voltage

VAI

AVSS

AVDD30

V

3IA

PullUp resistor

Rup

50

200

kΩ

3ICUD, 3ISUD

PullDown resistor

Rdn

50

220

kΩ

3ICUD, 3ISUD,

3ISD, 3ICD

Non-volatile Memory Characteristics

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Endurance

EN

1000

Cycles

Data retention

RT

10

Years

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended

Operating Ranges limits may affect device reliability.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.