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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NCE65R1K2 датащи(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE65R1K2 датащи(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 10 page  Wuxi NCE Power Semiconductor Co., Ltd Page http://www.ncepower.com v1.0 1 NCE65R1K2,NCE65R1K2D,NCE65R1K2F N-Channel Super Junction Power MOSFET VDS 650 V RDS(ON) MAX 1200 mΩ ID 4 A General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● Small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE65R1K2 TO-220 NCE65R1K2 NCE65R1K2D TO-263 NCE65R1K2D NCE65R1K2F TO-220F NCE65R1K2F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65R1K2 NCE65R1K2D NCE65R1K2F Unit Drain-Source Voltage ( VGS=0V） VDS 650 V Gate-Source Voltage ( VDS=0V) VGS ± 30 V Continuous Drain Current at Tc=25°C ID (DC) 4 4* A Continuous Drain Current at Tc=100°C ID (DC) 2.5 2.5 A Pulsed drain current (Note 1) IDM (pluse) 12 12 A Maximum Power Dissipation(Tc=25℃) Derate above 25 °C PD 46 0.37 28.5 0.23 W W/ °C Single pulse avalanche energy (Note2) EAS 130 mJ Avalanche current (Note 1) IAR 2 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 0.2 mJ Schematic diagram TO-263 TO-220 TO-220F |
Аналогичный номер детали - NCE65R1K2 |
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Аналогичное описание - NCE65R1K2 |
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