Publication Order Number:

MMSF4P01HD/D

© Semiconductor Components Industries, LLC, 2000

September, 2004 − Rev. XXX

1

MMSF4P01HD

Preferred Device

Power MOSFET

4 Amps, 12 Volts

P−Channel SO−8

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a very low reverse recovery time.

MiniMOS

t devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc−dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives.

Life

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

12

Vdc

12

Vdc

Gate−to−Source Voltage − Continuous

± 8.0

Vdc

5.1

3.3

26

Adc

Apk

(Note 2.)

2.5

Watts

Operating and Storage Temperature Range

− 55 to 150

°C

Thermal Resistance − Junction to Ambient

(Note 2.)

50

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

260

°C

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2

″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),

10 sec. max.

P−Channel

N−C

1

2

3

4

8

7

6

5

Top View

Source

Source

Gate

Drain

Drain

Drain

Drain

1

8

4 AMPERES

12 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MMSF4P01HDR2

SO−8

2500 Tape & Reel

SO−8

CASE 751

STYLE 13

http://onsemi.com

LYWW

MARKING

DIAGRAM

S4P01

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.

D

S

G