TPIC6B273DWRG4 datasheet(3/15 Pages) TI1

номер детали	TPIC6B273DWRG4

подробное описание детали	Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current

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TPIC6B273

POWER LOGIC OCTAL D-TYPE LATCH

SLIS031 – APRIL 1994 – REVISED JULY 1995

3

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

schematic of inputs and outputs

EQUIVALENT OF EACH INPUT

TYPICAL OF ALL DRAIN OUTPUTS

VCC

Input

GND

DRAIN

50 V

20 V

25 V

12 V

absolute maximum ratings over recommended operating case temperature range (unless

otherwise noted)†

Logic supply voltage, VCC (see Note 1)

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Logic input voltage range, VI

– 0.3 V to 7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power DMOS drain-to-source voltage, VDS (see Note 2)

50 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous source-to-drain diode anode current

500 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed source-to-drain diode anode current (see Note 3)

1 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3)

500 mA

. . . . . . . . . . . . . . . . . . .

Continuous drain current, each output, all outputs on, ID, TC = 25°C

150 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak drain current single output, IDM,TC = 25°C (see Note 3)

500 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single-pulse avalanche energy, EAS (see Figure 4)

30 mJ

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Avalanche current, IAS (see Note 4)

500 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total dissipation

See Dissipation Rating Table

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating virtual junction temperature range, TJ

–40

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating case temperature range, TC

–40

°C to 125°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range

– 65

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. All voltage values are with respect to GND.

2. Each power DMOS source is internally connected to GND.

3. Pulse duration

≤ 100 µs and duty cycle ≤ 2%.

4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 200 mH, IAS = 0.5 A (see Figure 4).

DISSIPATION RATING TABLE

PACKAGE

TC ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TC = 25°C

TC = 125°C

POWER RATING

DW

1389 mW

11.1 mW/

°C

278 mW

N

1050 mW

10.5 mW/

°C

263 mW

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