поискавой системы для электроныых деталей |
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FDD86369_F085 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDD86369_F085 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page ©2015 Fairchild Semiconductor Corporation FDD86369_F085 Rev. 1.0 www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage ID = 250μA, VGS = 0V 80 - - V IDSS Drain-to-Source Leakage Current VDS=80V, TJ = 25oC - - 1 μA VGS = 0V TJ = 175oC (Note 4) - - 1 mA IGSS Gate-to-Source Leakage Current VGS = ±20V - - ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2.0 2.7 4.0 V RDS(on) Drain to Source On Resistance ID = 80A, VGS= 10V TJ = 25oC - 5.9 7.9 m Ω TJ = 175oC (Note 4) - 13.0 17.4 m Ω Ciss Input Capacitance VDS = 40V, VGS = 0V, f = 1MHz - 2530 - pF Coss Output Capacitance - 430 - pF Crss Reverse Transfer Capacitance - 16 - pF Rg Gate Resistance VGS = 0.5V, f = 1MHz - 2.2 - Ω Qg(ToT) Total Gate Charge VGS = 0 to 10V VDD = 64V ID = 80A -36 54 nC Qg(th) Threshold Gate Charge VGS = 0 to 2V - 4.6 - nC Qgs Gate-to-Source Gate Charge -13 - nC Qgd Gate-to-Drain “Miller“ Charge - 8.5 - nC Switching Characteristics Drain-Source Diode Characteristics Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. ton Turn-On Time VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω - - 70 ns td(on) Turn-On Delay - 13 - ns tr Rise Time - 34 - ns td(off) Turn-Off Delay - 22 - ns tf Fall Time - 9 - ns toff Turn-Off Time - - 46 ns VSD Source-to-Drain Diode Voltage ISD =80A, VGS = 0V - - 1.25 V ISD = 40A, VGS = 0V - - 1.2 V trr Reverse-Recovery Time IF = 80A, dISD/dt = 100A/μs -49 64 ns Qrr Reverse-Recovery Charge - 40 53 nC |
Аналогичный номер детали - FDD86369_F085 |
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Аналогичное описание - FDD86369_F085 |
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