STB45N40DM2AG datasheet(8/15 Pages) STMICROELECTRONICS

номер детали	STB45N40DM2AG

подробное описание детали	Extremely low gate charge and input capacitance

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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8 / 15 page

Test circuits

STB45N40DM2AG

8/15

DocID028285 Rev 1

3

Test circuits

Figure 14: Test circuit for resistive load

switching times

Figure 15: Test circuit for gate charge

behavior

Figure 16: Test circuit for inductive load

switching and diode recovery times

Figure 17: Unclamped inductive load test

circuit

Figure 18: Unclamped inductive waveform

Figure 19: Switching time waveform

Аналогичный номер детали - STB45N40DM2AG

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB45N10L	87Kb / 6P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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	STB45N65M5	1Mb / 20P	N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages

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