STD20P3H6AG datasheet(3/15 Pages) STMICROELECTRONICS

номер детали	STD20P3H6AG

подробное описание детали	High avalanche ruggedness

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STD20P3H6AG

Electrical ratings

DocID028377 Rev 2

3/15

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

-30

V

VGS

Gate-source voltage

±20 V

V

ID

Drain current (continuous) at Tcase = 25 °C

-20

A

Drain current (continuous) at Tcase = 100 °C

-14

IDM

(1)

Drain current (pulsed)

-80

A

PTOT

Total dissipation at Tcase = 25 °C

40

W

EAS

(2)

Single pulse avalanche energy

250

mJ

Tstg

Storage temperature

–55 to 175

°C

Tj

Operating junction temperature

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

starting Tj = 25 °C, RG = 47 Ω, ID(min) = -20 A.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

3.75

°C/W

Rthj-pcb

(1)

Thermal resistance junction-pcb

50

Notes:

(1)

When mounted on a 1-inch² FR-4, 2 Oz copper board

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