STD845DN40 datasheet(3/10 Pages) STMICROELECTRONICS

номер детали	STD845DN40

подробное описание детали	Dual NPN high voltage transistors in a single package

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STD845DN40

Electrical characteristics

Doc ID 17211 Rev 3

3/10

2

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off

current (VBE = 0)

VCE = 700 V

VCE = 700 V Tc = 125 °C

100

500

µA

ICEO

Collector cut-off

current (IB = 0)

VCE = 400 V

250

µA

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = 10 mA

9

18

V

VCEO(sus)

(1)

Collector-emitter

sustaining voltage

(IB = 0)

IC = 100 mA

400

V

VCE(sat)

(1)

1.

Pulse test: pulse duration

≤300 µs, duty cycle ≤ 2 %.

Collector-emitter

saturation voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

IC = 2.5 A

IB = 0.5 A

IC = 4 A

IB = 1 A

0.5

0.7

1

1.5

V

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

IC = 2.5 A

IB = 0.5 A

1.1

1.2

1.3

V

hFE

(1)

DC current gain

IC = 10 mA

VCE = 5 V

IC = 2 A

VCE = 5 V

10

12

32

VF

Diode forward voltage

IF = 2 A

2.5

V

ts

tf

Resistive load

Storage time

Fall time

IC = 2 A

IB(on) = - IB(off) = 400 mA

VCC = 125 V

tp = 30 µs

2.5

0.2

µs

ts

tf

Inductive load

Storage time

Fall time

IC = 2 A, VCC = 200 V

VBE(off) = - 5 V IB(on) = 400 mA

RBB = 0, L = 200 µH

0.6

0.1

µs

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