STGP10M65DF2 datasheet(4/18 Pages) STMICROELECTRONICS

номер детали	STGP10M65DF2

подробное описание детали	Trench gate field-stop IGBT, M series 650 V, 10 A low loss

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Electrical characteristics

STGP10M65DF2

4/18

DocID027352 Rev 4

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

650

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 10 A

1.55

2.0

V

VGE = 15 V, IC = 10 A,

TJ = 125 °C

1.9

VGE = 15 V, IC = 10 A,

TJ = 175 °C

2.1

VF

Forward on-voltage

IF = 10 A

1.5

V

IF = 10 A, TJ = 125 °C

1.3

IF = 10 A, TJ = 175 °C

1.2

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

25

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ± 20 V

250

µA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

-

840

-

pF

Coes

Output

capacitance

-

63

-

Cres

Reverse transfer

capacitance

-

16

-

Qg

Total gate charge

VCC = 520 V, IC = 10 A, VGE = 15 V

(see Figure 30: " Gate charge test

circuit")

-

28

-

nC

Qge

Gate-emitter

charge

-

6

-

Qgc

Gate-collector

charge

-

12

-

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VCE = 400 V, IC = 10 A, VGE = 15 V,

RG = 22

Ω (see Figure 29: " Test circuit for

inductive load switching" )

-

19

-

ns

tr

Current rise

time

-

7.4

-

ns

(di/dt)on

Turn-on

current slope

-

1086

-

A/µs

td(off)

Turn-off-delay

time

-

91

-

ns

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Аналогичное описание - STGP10M65DF2

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STMicroelectronics	STGB10M65DF2	1Mb / 20P	Trench gate field-stop IGBT, M series 650 V, 10 A low loss
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	STGWA50M65DF2	971Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 50 A low loss
	STGD4M65DF2	1Mb / 19P	Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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Аналогичный номер детали - STGP10M65DF2

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