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STP100N8F6 датащи(PDF) 1 Page - STMicroelectronics |
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STP100N8F6 датащи(HTML) 1 Page - STMicroelectronics |
1 / 15 page February 2016 DocID026838 Rev 3 1/15 This is information on a product in full production. www.st.com STP100N8F6 N- channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on)max. ID PTOT STP100N8F6 80 V 0.009 Ω 100 A 176 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STP100N8F6 100N8F6 TO-220 Tube |
Аналогичный номер детали - STP100N8F6 |
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Аналогичное описание - STP100N8F6 |
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