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STW56N65DM2 датащи(PDF) 5 Page - STMicroelectronics |
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STW56N65DM2 датащи(HTML) 5 Page - STMicroelectronics |
5 / 12 page STW56N65DM2 Electrical characteristics DocID027142 Rev 2 5/12 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 48 A ISDM(1) Source-drain current (pulsed) - 192 A VSD(2) Forward on voltage VGS = 0 V, ISD = 48 A - 1.6 V trr Reverse recovery time ISD = 48 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 135 ns Qrr Reverse recovery charge - 0.68 µC IRRM Reverse recovery current - 10 A trr Reverse recovery time ISD = 48 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 260 ns Qrr Reverse recovery charge - 2.75 µC IRRM Reverse recovery current - 21 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
Аналогичный номер детали - STW56N65DM2 |
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Аналогичное описание - STW56N65DM2 |
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