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STW56N65DM2 датащи(PDF) 5 Page - STMicroelectronics

номер детали STW56N65DM2
подробное описание детали  N-channel 650 V, 0.058typ., 48 A MDmesh??DM2 Power MOSFET in a TO-247 package
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STW56N65DM2
Electrical characteristics
DocID027142 Rev 2
5/12
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
48
A
ISDM(1)
Source-drain current
(pulsed)
-
192
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 48 A
-
1.6
V
trr
Reverse recovery time
ISD = 48 A, di/dt = 100 A/µs,
VDD = 100 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
-
135
ns
Qrr
Reverse recovery charge
-
0.68
µC
IRRM
Reverse recovery current
-
10
A
trr
Reverse recovery time
ISD = 48 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
-
260
ns
Qrr
Reverse recovery charge
-
2.75
µC
IRRM
Reverse recovery current
-
21
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.


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