SPI20N60C3 datasheet(7/14 Pages) INFINEON

номер детали	SPI20N60C3

подробное описание детали	Cool MOS Power Transistor

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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7 / 14 page

2003-10-08

Page 7

SPP20N60C3, SPB20N60C3

SPI20N60C3, SPA20N60C3

Final data

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0

5

10

15

20

25

30

A

40

ID

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

Ω

1.5

4V

4.5V

5V

5.5V

6V

6.5V

20V

10 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 13.1 A, VGS = 10 V

-60

-20

20

60

100

°C

180

Tj

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Ω

1.1

SPP20N60C3

typ

98%

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0

1

2

3

4

5

6

7

V

9

VGS

0

10

20

30

40

50

60

A

80

150°C

25°C

12 Typ. gate charge

VGS = f (QGate)

parameter: ID = 20.7 A pulsed

0

20

40

60

80

100

nC

140

QGate

0

2

4

6

8

10

12

V

16

SPP20N60C3

0,8 VDS max

DS max

V

0,2

Аналогичный номер детали - SPI20N60C3

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPI20N60C3	1Mb / 15P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev.3.1 2009-02-19
Inchange Semiconductor ...	SPI20N60C3	356Kb / 3P	Isc N-Channel MOSFET Transistor

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SPI20N60C3 датащи(PDF) 7 Page - Infineon Technologies AG

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