CSD17552Q3A_16 datasheet(6/13 Pages) TI1

номер детали	CSD17552Q3A

подробное описание детали	N-Channel NexFET Power MOSFETs

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0.0

20.0

40.0

60.0

80.0

100.0

120.0

140.0

−50

−25

0

25

50

75

100

125

150

175

TC - Case Temperature (ºC)

Silicon limited

Package limited

G001

0.01

0.1

1

10

100

1000

5000

0.01

0.1

1

10

50

VDS - Drain-to-Source Voltage (V)

1ms

10ms

100ms

1s

DC

Single Pulse

Typical RthetaJA =146ºC/W(min Cu)

G001

1

10

80

0.01

0.1

1

TAV - Time in Avalanche (mS)

TC = 25ºC

TC = 125ºC

G001

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

−75

−25

25

75

125

175

TC - Case Temperature (ºC)

VGS = 4.5V

VGS = 10V

ID =11A

G001

0.0001

0.001

0.01

0.1

1

10

100

0

0.2

0.4

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VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

CSD17552Q3A

SLPS387B – SEPTEMBER 2012 – REVISED JANUARY 2016

www.ti.com

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature

6

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CSD17552Q3A датащи(PDF) 6 Page - Texas Instruments

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