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TLP5214 датащи(PDF) 5 Page - Toshiba Semiconductor

номер детали TLP5214
подробное описание детали  Isolated IGBT/Power MOSFET gate drive
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP5214 датащи(HTML) 5 Page - Toshiba Semiconductor

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TLP5214
2015-12-26
5
Electrical Characteristics (Note) (Ta =
−40 to 110 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.*
Max
Unit
Threshold Input Current(L/H)
IFLH
10
VCC = 30 V, VO < 5 V
-
0.8
6
mA
Threshold Input Voltage (H/L)
VFHL
VCC = 30 V, VO > 5 V
0.8
-
-
V
(*): All typical values are at Ta = 25°C
Note:
This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
power consumption design.
It is therefore all the more necessary to observe general precautions regarding ESD when handling this
component.
Isolation Characteristics (Note) (Ta = 25 °C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Capacitance input to output
CS
Vs = 0 V, f = 1 MHz
-
1.0
-
pF
Isolation resistance
RS
R.H.
≤ 60 %, VS = 500 V
1×10
12
10
14
-
Ω
Isolation voltage
BVS
AC, 60 s
5000
-
-
V rm s
AC, 1 s, in oil
-
10000
-
DC, 60 s, in oil
-
10000
-
Vdc
Note: This device considered a two-terminal device:
All pins on the LED side are shorted together, and all
pin on the photodetector side are shorted together.
Switching Characteristics (Note) (Ta =
−40 to 110 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.*
Max
Unit
Propagation delay time
(Note 9)
L
→ H
tpLH
11
VCC2 = 30 V
Rg = 10
Ω
Cg = 25 nF
Duty = 50%
IF = 0
→ 10 mA
50
85
150
ns
H
→ L
tpHL
IF = 10
→ 0 mA
50
90
150
Output rise time (10
−90 %) (Note 9)
tr
IF = 0
→ 10 mA
-
32
-
Output fall time (90
−10 %) (Note 9)
tf
IF = 10
→ 0 mA
-
18
-
Pulse with distortion
(Note
9) | tpHL−tpLH |
IF = 0
↔ 10 mA
-
-
50
Propagation delay skew
(Note
9)
(device to device)
(Note 10)
tpsk
IF = 0
↔ 10 mA
−80
-
80
DESAT Sense to 90% Delay
tDESAT(90%)
12
CDESAT = 100 pF, Rg = 10
Ω
Cg = 25 nF, VCC2 = 30 V
RF = 2.1 k
Ω
-
180
500
DESAT Sense to 10% Delay
tDESAT(10%)
-
3.5
5
μs
DESAT Sense to Low Level
FAULT Signal Delay
tDESAT(FAULT)
CDESAT = 100 pF, Rg = 10
Ω
Cg = 25 nF, VCC2 = 30 V
RF = 2.1 k
Ω
CF = Open
-
300
500
ns
DESAT Sense to Low Propagation
Delay
tDESAT(LOW)
-
200
-
DESAT Input Mute
tDESAT(MUTE)
7
14
-
μs
RESET to High Level FAULT
Signal Delay
tRESET(FAULT)
VCC1 = 5.5 V
0.2
0.45
2
Common Mode Transient Immunity
at High Level Output
CMH
13 to
16
IF = 10 mA
VO (min) = 26 V
±35
-
-
kV/
μs
Common Mode Transient Immunity
at Low Level Output
CML
IF = 0 mA
VO (max) = 1 V
±35
-
-
(*): All typical values are at Ta = 25 °C.
Note 9: Input signal (f = 10 kHz, duty = 50%, tr = tf = 5 ns or less)
CL is approximately 15 pF which includes probe and stray wiring capacitance.
Note 10: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or
tpLH that will be seen between units at the same given conditions (supply voltage, input current, temperature,
etc).


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