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TLP292 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TLP292 датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TLP292 2013-09-12 3 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C) Characteristic Symbol Note Rating Unit R.M.S. forward current IF(RMS) ±50 mA Input forward current derating (Ta ≥ 90°C) ΔIF /ΔTa -1.5 mA /°C Input forward current (pulsed) IFP (Note 2) ±1 A Junction temperature Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation PC 150 mW Collector power dissipation derating (Ta ≥ 25°C) ΔPC /ΔTa -1.5 mW /°C Junction temperature Tj 125 °C Operating temperature range Topr -55 to 125 °C Storage temperature range Tstg -55 to 125 °C Lead soldering temperature Tsol 260 (10s ) °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ΔPT /ΔTa -2.0 mW /°C Isolation voltage BVS (Note3) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods” ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note2: Pulse width ≤ 100μs, frequency 100Hz Note3: AC, 1min., R.H. ≤ 60%, Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. |
Аналогичный номер детали - TLP292 |
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Аналогичное описание - TLP292 |
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