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TLP222G датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLP222G
подробное описание детали  Cordless Telephones PBX Modems
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP222G датащи(HTML) 2 Page - Toshiba Semiconductor

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TLP222G,TLP222G-2
2014-09-01
2
Absolute Maximum Rating (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
LED
Forward current
IF
50
mA
Forward current derating (Ta ≥ 25°C)
ΔIF/°C
−0.5
mA/°C
Peak forward current
(100
μs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Detector
Off-state output terminal voltage
VOFF
350
V
On-state
current
TLP222G
ION
120
mA
TLP222G-2
One channel
operation
Two channel
operations (Note 1)
On-state
current
derating
(Ta ≥ 25°C)
TLP222G
ΔION/°C
−1.2
mA/°C
TLP222G-2
One channel
operation
Two channel
operations (Note 1)
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 minute, R.H. ≤ 60%)
(Note 2)
BVS
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Two channels operating simultaneously.
Note 2: Device considered a two-terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Unit
Supply voltage
VDD
280
V
Forward current
IF
5
7.5
25
mA
On-state current
ION
100
mA
Operating temperature
Topr
−20
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
LED
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
μA
Capacitance
CT
V
= 0, f = 1 MHz
30
pF
Detector
Off-state current
IOFF
VOFF = 350 V
1
μA
Capacitance
COFF
V
= 0, f = 1 MHz
30
pF


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