поискавой системы для электроныых деталей |
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TLP292-4 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TLP292-4 датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 12 page TLP292-4 2015-10-21 3 Absolute Maximum Ratings (Note)(Unless otherwise specified, Ta = 25°C) Characteristics Symbol Note Rating Unit R.M.S. forward current IF(RMS) ±50 mA Input forward current derating (Ta ≥50°C) ∆IF /ΔTa −0.59 mA /°C Input forward current(Pulsed) IFP (Note1) ±1 A LED power disipation PD 70 mW LED power dissipation derating(Ta ≥50°C) ∆PD /ΔTa -0.82 mW /°C Junction temperature Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 Circuit) PC 100 mW Collector power dissipation derating(Ta ≥25°C) (1 Circuit) ∆PC /ΔTa -0.91 mW /°C Junction temperature Tj 125 °C Operating temperature range Topr −55 to 125 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature Tsol 260 (10 s) °C Total power dissipation (1 Circuit) PT 170 mW Input power dissipation derating (Ta ≥25°C) (1 Circuit) ∆PT /ΔTa −1.55 mW /°C Isolation Voltage AC, 60s, R.H. ≤60% BVS (Note2) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Pulse width ≤ 100 μs, frequency 100 Hz Note2: This device is considered as a two-terminal device: All pins on the LED side are shorted together, and all pin on the photodetector side are shorted together. Electrical Characteristics (Unless otherwise specified, Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Input forward voltage VF IF = ±10 mA 1.1 1.25 1.4 V Input capacitance CT V = 0 V, f = 1 MHz — 60 — pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 — — V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V Dark current IDARK VCE = 48 V, — 0.01 0.08 μA VCE = 48 V, Ta = 85°C — 2 50 μA Collector-emitter capacitance CCE V = 0 V, f = 1 MHz — 10 — pF |
Аналогичный номер детали - TLP292-4 |
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Аналогичное описание - TLP292-4 |
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