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ST04N20D датащи(PDF) 1 Page - Stanson Technology |
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ST04N20D датащи(HTML) 1 Page - Stanson Technology |
1 / 7 page ST04N20D N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST04N20D 2014. V1 DESCRIPTION ST04N20D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION TO-252 PART MARKING P:Perduce Code W:Wafer Code Y:Year Code A:Product Code FEATURE l 200V/4.0A, RDS(ON) = 400m @VGS = 10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252 package design |
Аналогичный номер детали - ST04N20D |
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Аналогичное описание - ST04N20D |
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