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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NJ10N80-BL датащи(PDF) 3 Page - Nanjing International Group Co |
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NJ10N80-BL датащи(HTML) 3 Page - Nanjing International Group Co |
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3 / 6 page  ELECTRICAL CHARACTERISTICS (TJ =25° , unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250 μA 800 V Drain-Source Leakage Current IDSS VDS =800V, VGS =0 V 10 μA VDS =640V, TC =125°C 100 Gate-Body Leakage Current IGSS VDS =0 V, VGS = ±30 V ±100 nA Breakdown Voltage Temperature Coefficient BVDSS/ TJ ID=250μA, Referenced to 25°C 0.98 V/° ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250μA 3.0 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 5.0A 0.9 1.1 DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS =0V, f=1MHz 2150 2800 pF Output Capacitance COSS 180 230 pF Reverse Transfer Capacitance CRSS 15 20 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=400V, ID=10.0A, RG=25 (Note 1,2) 50 110 ns Turn-ON Rise Time tR 130 270 Turn-OFF Delay Time tD(OFF) 90 190 Turn-OFF Fall-Time tF 80 170 Total Gate Charge QG VDS =640V, VGS =10V, ID =10.0A (Note 1,2) 45 58 nC Gate Source Charge QGS 13.5 Gate Drain Charge QGD 17 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=10.0 A,VGS=0V 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 40.0 Reverse Recovery Time trr VGS = 0V, dIF /dt = 100 A/μs, IS = 10.0A (Note 1) 730 ns Reverse Recovery Charge QRR 10.9 nC Notes: 1. Pulse Test: Pulse Width 300μs, Duty Cycle 2%. 2. Independent of operating temperature. NJ10N80 POWER MOSFET |
Аналогичный номер детали - NJ10N80-BL |
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Аналогичное описание - NJ10N80-BL |
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