поискавой системы для электроныых деталей |
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MTBH0N25J3-0-T3-G датащи(PDF) 4 Page - Cystech Electonics Corp. |
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MTBH0N25J3-0-T3-G датащи(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 4/9 MTBH0N25J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 6 7 8 0 3 6 9 12 15 VDS, Drain-Source Voltage(V) 10V 9V 8V 7V 6V 5V 4.5V 4V 3.5V VGS=3V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250 μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 0.01 0.1 1 10 ID, Drain Current(A) VGS=3V VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 46 8 1 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 200 400 600 800 1000 1200 1400 1600 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.5 1 1.5 2 2.5 3 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS, Gate-Source Voltage(V) ID=3A VGS=10V, ID=3A RDS(ON)@Tj=25°C : 780mΩ |
Аналогичный номер детали - MTBH0N25J3-0-T3-G |
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Аналогичное описание - MTBH0N25J3-0-T3-G |
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