BAS-04 datasheet(1/2 Pages) DGNJDZ

номер детали	BAS-04

подробное описание детали	Low Forward Voltage

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производитель	DGNJDZ [Nanjing International Group Co]

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SOT-23 Plastic-Encapsulate Diodes

BAS40/-04/-05/-06

SCHOTTKY

BARRIER DIODE

FEATURES

Low Forward Voltage

Fast Switching

BAS40 MARKING: 43•

BAS40-06 MARKING: 46

BAS40-05 MARKING：45

BAS40-04 MARKING：44

Maximum Ratings @Ta=25

℃

Parameter

Symbol

Limit

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

VR

40

V

Forward continuous current

IFM

200

mA

Power dissipation

PD

200

mW

Thermal resistance junction to ambient

RθJA

500

℃/W

Junction temperature

TJ

1

25

℃

Storage temperature range

TSTG

-

55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

M

ax

U

nit

Reverse breakdown voltage

V(BR)

IR= 10μA

40

V

Reverse voltage leakage current

IR

VR=30V

200

nA

Forward voltage

VF

IF=1mA

IF=40mA

380

1000

mV

Diode capacitance

CD

VR=0,f=1MHz

5

pF

Reverse recovery time

t r r

Irr=1mA, IR=IF=10mA

RL=100Ω

5

n

s

SOT-23

DONGGUAN NANJING ELECTRONICS LTD.,

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