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MTB030P06KH8 датащи(PDF) 1 Page - Cystech Electonics Corp.

номер детали MTB030P06KH8
подробное описание детали  P-Channel Enhancement Mode Power MOSFET
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производитель  CYSTEKEC [Cystech Electonics Corp.]
домашняя страница  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB030P06KH8 датащи(HTML) 1 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
Page No. : 1/10
MTB030P06KH8
CYStek Product Specification
P-Channel Enhancement Mode Power MOSFET
MTB030P06KH8 BVDSS
-60V
-34A
ID@VGS=10V, TC=25°C
-5.9A
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-6A
21.4 mΩ(typ)
Features
RDS(ON)@VGS=-4.5V, ID=-4A
35.6 mΩ(typ)
RDS(ON)@VGS=-4V, ID=-3A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• RoHS compliant package
Symbol
Outline
MTB030P06KH8
DFN5×6
42.6 mΩ(typ)
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
Shipping
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
3000 pcs / tape & reel
MTB030P06KH8-0-T6-G
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name


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