2SJ126 datasheet(2/2 Pages) ISC

номер детали	2SJ126

подробное описание детали	Low Drain-Source ON Resistance

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc P-Channel Mosfet Transistor

2SJ126

·ELECTRICAL CHARACTERISTICS (T

C=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= -10mA

-60

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID= -1mA

-1.5

-3.5

V

RDS(ON)

Drain-Source On-stage Resistance

VGS= -10V; ID= -5A

0.4

Ω

IGSS

Gate Source Leakage Current

VGS= -20V;VDS= 0

-100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= -60V,VGS= 0

-1

mA

VSD

Diode Forward Voltage

IF=-10 A;VGS= 0

-4.5

V

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Isahaya Electronics Cor...	2SJ125	216Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
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Аналогичное описание - 2SJ126

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Inchange Semiconductor ...	2SJ274	59Kb / 2P	Low Drain-Source ON Resistance
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