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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6216PBF-1 датащи(PDF) 2 Page - International Rectifier |
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IRF6216PBF-1 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF6216PbF-1 Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 2.7 ––– ––– S VDS = -50V, ID = -1.3A Qg Total Gate Charge ––– 33 49 ID = -1.3A Qgs Gate-to-Source Charge ––– 7.2 11 nC VDS = -120V Qgd Gate-to-Drain ("Miller") Charge ––– 15 23 VGS = -10V, td(on) Turn-On Delay Time ––– 18 ––– VDD = -75V tr Rise Time ––– 15 ––– ID = -1.3A td(off) Turn-Off Delay Time ––– 33 ––– RG = 6.5 Ω tf Fall Time ––– 26 ––– VGS = -10V Ciss Input Capacitance ––– 1280 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1290 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 99 ––– VGS = 0V, VDS = -120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 220 ––– VGS = 0V, VDS = 0V to -120V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 200 mJ IAR Avalanche Current ––– -4.0 A Avalanche Characteristics Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.240 Ω VGS = -10V, ID = -1.3A VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V VDS = VGS, ID = -250μA ––– ––– -25 μA VDS = -150V, VGS = 0V ––– ––– -250 VDS = -120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 nA VGS = 20V IGSS IDSS Drain-to-Source Leakage Current Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -1.3A, VGS = 0V trr Reverse Recovery Time ––– 80 120 nS TJ = 25°C, IF = -1.3A Qrr Reverse RecoveryCharge ––– 310 460 nC di/dt = -100A/μs Diode Characteristics -2.2 -19 A S D G |
Аналогичный номер детали - IRF6216PBF-1 |
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Аналогичное описание - IRF6216PBF-1 |
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