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IRF6718L2PBF датащи(PDF) 1 Page - International Rectifier

номер детали IRF6718L2PBF
подробное описание детали  Ultra Low Package Inductance
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF6718L2PBF датащи(HTML) 1 Page - International Rectifier

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1
07/27/11
IRF6718L2TRPbF
IRF6718L2TR1PbF
DirectFET® Power MOSFET
‚
Applicable DirectFET Outline and Substrate Outline

Typical values (unless otherwise specified)
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.44mH, RG = 25Ω, IAS = 49A.
Notes:
DirectFET
® ISOMETRIC
L6
S1
S2
SB
M2
M4
L4
L6
L8
l RoHS Compliant Containing No Lead and Bromide

l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Very Low R
DS(ON) for Reduced Conduction Losses
l Optimized for Active O-Ring / Efuse Applications
l Compatible with existing Surface Mount Techniques

Description
The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when
application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The
IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications.
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
ID = 61A
TJ = 25°C
TJ = 125°C
0
20
40
60
80 100 120 140 160 180
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
ID= 49A
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
64nC
20nC
9.4nC
67nC
50nC
1.9V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
530
Max.
52
270
490
±20
25
61
49
PD - 97395E


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