BU4508DX datasheet(1/2 Pages) ISC

номер детали	BU4508DX

подробное описание детали	High Switching Speed

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

BU4508DX

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 800V (Min)

·High Switching Speed

·Built-in Damper Diode

APPLICATIONS

·Designed for use in horizontal deflection circuits of

color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector- Emitter Voltage(VBE= 0)

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current- Continuous

8

A

ICM

Collector Current-Peak

15

A

IB

Base Current- Continuous

4

A

IBM

Base Current-Peak

6

A

PC

Collector Power Dissipation

@ TC=25℃

45

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.8

℃/W

Аналогичный номер детали - BU4508DX

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BU4508DX	55Kb / 6P	Silicon Diffused Power Transistor February 1999 Rev 1.000

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