1N50A datasheet(2/2 Pages) ISC

номер детали	1N50A

подробное описание детали	Drain Current ID= 1.2A@ TC=25C

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel MOSFET Transistor

1N50A

·ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID=250µA

500

V

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID=250µA

2.0

4.0

V

VSD

Diode Forward On-voltage

IS= 1.2A ;VGS= 0

1.5

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 0.6A

5.5

Ω

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=500V; VGS= 0

10

µA

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

220

290

pF

Crss

Reverse Transfer capacitance

11

13

Coss

Output Capacitance

30

35

tr

Rise Time

VGS=10V;

ID=1.2A;

VDD=250V;

RL=24Ω

13

35

ns

td(on)

Turn-on Delay Time

12

35

tf

Fall Time

15

40

td(off)

Turn-off Delay Time

42

90

·

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Inchange Semiconductor ...	1N65	136Kb / 2P	Drain Current ID= 1.2A@ TC=25C
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