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4X16E43V датащи(PDF) 11 Page - List of Unclassifed Manufacturers |
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4X16E43V датащи(HTML) 11 Page - List of Unclassifed Manufacturers |
11 / 9 page 11 EDO DRAM NOTES 1. All voltages referenced to VSS. 2. This parameter is sampled. VCC = +3.3V; f = 1 MHz; TA = 25°C. 3. ICC is dependent on output loading and cycle rates. Specified values are obtained with mini- mum cycle time and the outputs open. 4. Enables on-chip refresh and address counters. 5. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range is ensured. 6. An initial pause of 100µs is required after power- up, followed by eight RAS# refresh cycles (RAS#- ONLY or CBR with WE# HIGH), before proper device operation is ensured. The eight RAS# cycle wake-ups should be repeated any time the tREF refresh requirement is exceeded. 7. AC characteristics assume tT = 2.5ns. 8. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL (or between VIL and VIH). 9. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 10. If CAS# and RAS# = VIH, data output is High-Z. 11. If CAS# = VIL, data output may contain data from the last valid READ cycle. 12. Measured with a load equivalent to two TTL gates and 100pF; and VOL = 0.8V and VOH = 2V. 13. If CAS# is LOW at the falling edge of RAS#, output data will be maintained from the previous cycle. To initiate a new cycle and clear the data- out buffer, CAS# must be pulsed HIGH for tCP. 14. The tRCD (MAX) limit is no longer specified. tRCD (MAX) was specified as a reference point only. If tRCD was greater than the specified tRCD (MAX) limit, then access time was controlled exclusively by tCAC (tRAC [MIN] no longer applied). With or without the tRCD limit, tAA and tCAC must always be met. 15. The tRAD (MAX) limit is no longer specified. tRAD (MAX) was specified as a reference point only. If tRAD was greater than the specified tRAD (MAX) limit, then access time was controlled exclusively by tAA (tRAC and tCAC no longer applied). With or without the tRAD (MAX) limit, tAA, tRAC, and tCAC must always be met. 16. Either tRCH or tRRH must be satisfied for a READ cycle. 17. tOFF (MAX) defines the time at which the output achieves the open circuit condition and is not referenced to VOH or VOL. 18. tWCS, tRWD, tAWD, and tCWD are not restrictive operating parameters. tWCS applies to EARLY WRITE cycles. If tWCS > tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain an open circuit throughout the entire cycle. tRWD, tAWD, and tCWD define READ- MODIFY-WRITE cycles. Meeting these limits allows for reading and disabling output data and then applying input data. OE# held HIGH and WE# taken LOW after CAS# goes LOW results in a LATE WRITE (OE#-controlled) cycle. tWCS, tRWD, tCWD, and tAWD are not applicable in a LATE WRITE cycle. 19. These parameters are referenced to CAS# leading edge in EARLY WRITE cycles and WE# leading edge in LATE WRITE or READ-MODIFY-WRITE cycles. 20. If OE# is tied permanently LOW, LATE WRITE, or READ-MODIFY-WRITE operations are not possible. 21. A HIDDEN REFRESH may also be performed after a WRITE cycle. In this case, WE# is LOW and OE# is HIGH. 22. RAS#-ONLY REFRESH requires that all 8,192 rows of the ARC8V4M16E or all 4,096 rows of the 4X16E43V be refreshed at least once every 64ms. 23. CBR REFRESH for either device requires that at least 4,096 cycles be completed every 64ms. 24. The DQs go High-Z during READ cycles once tOD or tOFF occur. If CAS# stays LOW while OE# is brought HIGH, the DQs will go High-Z. If OE# is brought back LOW (CAS# still LOW), the DQs will provide the previously read data. 25. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE# HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. If OE# is taken back LOW while CAS# remains LOW, the DQs will remain open. 26. Column address changed once each cycle. 27. The first CASx# edge to transition LOW. 4 MEG x 16 EDO DRAM |
Аналогичный номер детали - 4X16E43V |
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Аналогичное описание - 4X16E43V |
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