© 2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

TIP105/TIP106/TIP107 Rev. 1.0.0

1

October 2008

TIP105/TIP106/TIP107

PNP Epitaxial Silicon Darlington Transistor

• Monolithic Construction With Built In Base-Emitter Shunt Resistors

• Collector-Emitter Sustaining Voltage

• Low Collector-Emitter Saturation Voltage

• Industrial Use

• Complementary to TIP100/101/102

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

: TIP105

: TIP106

: TIP107

- 60

- 80

- 100

V

V

V

Collector-Emitter Voltage : TIP105

: TIP106

: TIP107

- 60

- 80

- 100

V

V

V

Emitter-Base Voltage

- 5

V

Collector Current (DC)

- 8

A

Collector Current (Pulse)

- 15

A

Base Current (DC)

- 1

A

2

W

80

W

Junction Temperature

150

°C

Storage Temperature

- 65 ~ 150

°C

1.Base

2.Collector

3.Emitter

1

TO-220

R1

10k

W

@

R2

0.6k

W

@

Equivalent Circuit

B

E

C

R1

R2