2SK3475

2002-01-09

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3475

VHF- and UHF-band Amplifier Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

20

V

Gain-source voltage

±5

V

Drain current

1

A

Power dissipation

3

W

Channel temperature

150

°C

Storage temperature range

−45~150

°C

Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)

Marking

Caution

Please take care to avoid generating static electricity when handling this transistor.

Unit: mm

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1D

Type name

1

W B

2

3

1. Gate

2. Source

3. Drain