поискавой системы для электроныых деталей |
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IRF830PBF датащи(PDF) 4 Page - Thinki Semiconductor Co., Ltd. |
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IRF830PBF датащи(HTML) 4 Page - Thinki Semiconductor Co., Ltd. |
4 / 6 page -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *. Notes : 1. V GS = 10 V 2. I D = 2.65 A T J , Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *. Notes : 1. V GS = 0 V 2. I D = 250 T J , Junction Temperature [ oC] 25 50 75 100 125 150 0 1 2 3 4 5 T C' Case Temperature [ oC] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 Ps Operation in This Area is Limited by R DS(on) *. Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS , Drain-Source Voltage [V] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 t 2 t 1 *. N o te s : 1 . Z ?J C ( t) = 1.28 ? /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P DM * Z ?J C (t) s ing le pu ls e D= 0 .5 0.02 0.2 0.05 0.1 0.0 1 t 1 , S q u a r e W a v e P u ls e D u r a tion [s ec ] Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature Fig 11. Transient Thermal Response Curve Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 4/6 Rev.05 ® IRF830PBF |
Аналогичный номер детали - IRF830PBF |
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Аналогичное описание - IRF830PBF |
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