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CSD18533Q5AT датащи(PDF) 4 Page - Texas Instruments

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номер детали CSD18533Q5AT
подробное описание детали  60V N-Channel NexFET Power MOSFET
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CSD18533Q5AT датащи(HTML) 4 Page - Texas Instruments

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GATE
Source
DRAIN
M0137-01
GATE
Source
DRAIN
M0137-02
CSD18533Q5A
SLPS388B – SEPTEMBER 2012 – REVISED JANUARY 2015
www.ti.com
Max RθJA = 50°C/W
Max RθJA = 125°C/W
when mounted on
when mounted on a
1 inch2 (6.45 cm2) of
minimum pad area of
2 oz. (0.071 mm thick)
2 oz. (0.071 mm thick)
Cu.
Cu.
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
4
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