IRFB16N60L

SMPS MOSFET

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity

.

TO-220AB

10/19/04

www.irf.com

1

S

D

G

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

600V

385m

Ω

130ns

16A

Absolute Maximum Ratings

Parameter

Max.

Units

16

10

A

Pulsed Drain Current

c

60

310

W

Linear Derating Factor

2.5

W/°C

Gate-to-Source Voltage

±30

V

dv/dt

Peak Diode Recovery dv/dt

e

11

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

1.1(10)

N•m (lbf•in)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

–––

–––

16

MOSFET symbol

(Body Diode)

A

showing the

Pulsed Source Current

–––

–––

60

integral reverse

(Body Diode)

Ã

c

p-n junction diode.

Diode Forward Voltage

–––

–––

1.5

V

f

Reverse Recovery Time

–––

130

200

–––

240

360

f

Reverse Recovery Charge

–––

450

670

f

––– 1080 1620

f

Reverse Recovery Current

–––

5.8

8.7

A

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

PD - 94631A