SI2301 datasheet(2/6 Pages) ZPSEMI

номер детали	SI2301

подробное описание детали	P-Channel Enhancement Mode MOSFET

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Typical Characteristics

0

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10

12

14

0

1

2

3

4

5

-VDS,Drain-Source Voltage(V)

0

2

4

6

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10

12

0

1

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3

4

-VGS,Gate-to-Source Voltage (V)

Figure 1．Output Characteristics

Figure 2．Transfer Characteristics

22

22.2

22.4

22.6

22.8

23

23.2

0

50

100

150

Tj,Junction Temperature(℃)

0.8

0.9

1

1.1

1.2

1.3

0

50

100

150

Tj,Junction Temperature(℃)

Figure 3．Breakdown Voltage Variation

Figure 4．Gate Threshold Variation

with Temperature

VGS=2.5V

VGS=2.0V

VGS=3，3.5，4V，4.5V

Tj＝150

℃

Tj＝25

℃

ID=250uA

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SI2301

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