поискавой системы для электроныых деталей |
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TLP521-4GB датащи(PDF) 2 Page - List of Unclassifed Manufacturers |
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TLP521-4GB датащи(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 3 page DB92546m-AAS/A3 PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V F) 1.0 1.15 1.3 V I F = 10mA Reverse Current (I R) 10 µA V R = 4V Output Collector-emitter Breakdown (BV CEO) 55 V I C = 0.5mA ( Note 2 ) Emitter-collector Breakdown (BV ECO) 6 V I E = 100µA Collector-emitter Dark Current (I CEO) 100 nA V CE = 20V Coupled Current Transfer Ratio (CTR) (Note 2) TLP521, TLP521-2, TLP521-4 50 600 % 5mA I F , 5V VCE CTR selection available BL 200 600 % GB 100 600 % GB 30 % 1mA I F , 0.4V VCE Collector-emitter Saturation VoltageV CE (SAT) 0.4 V 8mA I F , 2.4mA IC -GB 0.4 V 1mA I F , 0.2mA IC Input to Output Isolation Voltage V ISO 5300 V RMS See note 1 7500 V PK See note 1 Input-output Isolation Resistance R ISO 5x1010 Ω V IO = 500V (note 1) Response Time (Rise), tr 4 µs V CE = 2V , Response Time (Fall), tf 3 µs I C = 2mA, RL = 100Ω Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 7/4/03 ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 50mA Reverse Voltage 6V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BV CEO 55V Emitter-collector Voltage BV ECO 6V Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) |
Аналогичный номер детали - TLP521-4GB |
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Аналогичное описание - TLP521-4GB |
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