Analog Power

AM4N65P

N-Channel 650-V (D-S) MOSFET

650

4

a

Symbol

Limit

Units

650

±20

Continuous Drain Current

a

4

16

4

A

Power Dissipation

a

300

W

-55 to 175

°C

Symbol

Maximum

Units

62.5

0.5

Notes

a.

Package Limited

b.

Pulse width limited by maximum junction temperature

c.

Surface Mounted on 1” x 1” FR4 Board.

Pulsed Drain Current

b

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

V

Parameter

Drain-Source Voltage

Gate-Source Voltage

A

Maximum Junction-to-Ambient

c

Maximum Junction-to-Case

Continuous Source Current (Diode Conduction)

a

PRODUCT SUMMARY

Key Features:

• Low thermal impedance

• Fast switching speed

Typical Applications:

• Power Supplies

• Motor Drives

• Consumer Electronics

DRAIN

connected

to TAB

© Preliminary

1

Publication Order Number:

DS_AM4N65P_1A