BC807-25W datasheet(1/3 Pages) SUNMATE

номер детали	BC807-25W

подробное описание детали	PNP SILICON GENERAL PURPOSE TRANSISTORS

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• Case: SOT-323 Molded Plastic

• Terminals: Solderable per MIL-STD-202, Method 208

• Weight: 0.005 grams (approx.)

SOT-323

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.071

.087

1.80

2.20

B

.045

.053

1.15

1.35

C

.083

.096

2.10

2.45

D

.026 Nominal

0.65Nominal

E

.047

.055

1.20

1.40

F

.012

.016

.30

.40

G

.000

.004

.000

.100

H

.035

.039

.90

1.00

J

.004

.010

.100

.250

A

C

B

D

E

F

G

H

J

K

DIMENSIONS

E

B

C

• Capable of 0.2Watts of Power Dissipation.

• Collector-current 0.5A

• Operating and storage junction temperature range: -55OC to +150OC

• Lead Free Finish/RoHS Compliant ("P" Suffix designates

• Epoxy meets UL 94 V-0 flammability rating

• Moisure Sensitivity Level 1

Halogen free available upon request by adding suffix "-HF"

•

K

.006

.016

.15

.40

Features

Mechanical Data

BC807-16W/25W/40W

PNP SILICON GENERAL PURPOSE TRANSISTORS

•

RoHS Compliant. See ordering information)

VCBO

−−50

V

VCEO

C = −10 mA

−−45

V

VEBO

−−5V

IC

collector current (DC)

−−500

mA

ICM

peak collector current

−−1A

IBM

peak base current

−−200

mA

Ptot

amb ≤ 25 °C; note 1

−

200

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

collector-base voltage

open emitter

collector-emitter voltage open base; I

emitter-base voltage

open collector

total power dissipation

T

Parameter

Symbol

Min

Max

Units

Maximum Ratings TA = 25°C unless otherwise specified

Аналогичный номер детали - BC807-25W

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BC807-25W	61Kb / 8P	PNP general purpose transistor 1999 May 18
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Аналогичное описание - BC807-25W

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