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LC709203FXE-04MH датащи(PDF) 6 Page - ON Semiconductor |
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LC709203FXE-04MH датащи(HTML) 6 Page - ON Semiconductor |
6 / 22 page LC709203F www.onsemi.com 6 Table 4. Electrical Characteristics at Ta = 40 to +85C, VSS = 0V Parameter Symbol Pin/Remarks Conditions Specification Unit VDD [V] min typ max High level input current IIH (1) SDA, SCL VIN = VDD (including output transistor off leakage current) 2.5 to 4.5 1 A Low level input current IIL (1) SDA, SCL VIN = VSS (including output transistor off leakage current) 2.5 to 4.5 1 High level output voltage VOH (1) TSW IOH = 0.4 mA 3.0 to 4.5 VDD0.4 V VOH (2) IOH = 0.2 mA 2.5 to 4.5 VDD0.4 Low level output voltage VOL (1) TSW, ALARMB, SDA, SCL IOL = 3.0 mA 3.0 to 4.5 0.4 VOL (2) IOL = 1.3 mA 2.5 to 4.5 0.4 Hysteresis voltage VHYS(1) SDA, SCL 2.5 to 4.5 0.1VDD Pin capacitance CP All pins Pins other than the pin under test VIN = VSS Ta = 25 C 2.5 to 4.5 10 pF Reset Release Voltage(Note 2) VRR VDD 2.4 V Initialization Time after Reset release(Note 2) TINIT 2.4 to 4.5 90 ms Auto sleep set time TATS 2.4 to 4.5 1 1.2 s Time measurement accuracy TME Ta = 20C to +70C 2.5 to 4.5 3.5 +3.5 % Consumption current (Note 3) IDD (1) VDD Operational mode 2.5 to 4.5 3 4.5 A IDD (2) Sleep mode 2.5 to 4.5 1 2 Voltage measurement accuracy VME (1) VDD Ta = +25 C 3.6 7.5 +7.5 mV/cell VME (2) Ta = 20C to +70C 2.5 to 4.5 20 +20 Note 2: Once VDD voltage exceeds over the VRR, this LSI will release RESET status. And the LSI goes into Sleep mode TINIT after it. Note 3: Consumption current is a value in the range of 20C to +70C. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
Аналогичный номер детали - LC709203FXE-04MH |
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Аналогичное описание - LC709203FXE-04MH |
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