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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SI4816DY-E3 датащи(PDF) 2 Page - Vishay Siliconix |
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SI4816DY-E3 датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  Si4816DY Vishay Siliconix www.vishay.com 2 Document Number: 71121 S-41697—Rev. E, 20-Sep-04 MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS( h) VDS = VGS ID = 250 mA Ch-1 0.8 2 V Gate Threshold Voltage VGS(th) VDS = VGS,ID = 250 mA Ch-2 1.0 3 V Gate Body Leakage IGSS VDS = 0 V VGS = 20 V Ch-1 100 nA Gate-Body Leakage IGSS VDS =0 V, VGS =20 V Ch-2 100 nA VDS = 30 V VGS = 0 V Ch-1 1 Zero Gate Voltage Drain Current IDSS VDS =30 V, VGS =0 V Ch-2 100 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V VGS = 0 V TJ = 85_C Ch-1 15 mA VDS =30 V, VGS =0 V,TJ =85_C Ch-2 2000 On State Drain Currentb ID( ) VDS = 5 V VGS = 10 V Ch-1 20 A On-State Drain Currentb ID(on) VDS =5 V, VGS =10 V Ch-2 30 A VGS =10 V, ID =6.3 A Ch-1 0.018 0.022 Drain Source On State Resistanceb rDS( ) VGS =10 V,ID =10 A Ch-2 0.0105 0.013 Ω Drain-Source On-State Resistanceb rDS(on) VGS =4.5 V, ID =5.4 A Ch-1 0.024 0.030 Ω VGS =4.5 V, ID =8.6 A Ch-2 0.015 0.0185 Forward Transconductanceb gf VDS =15 V,ID =6.3 A Ch-1 17 S Forward Transconductanceb gfs VDS =15 V,ID =10 A Ch-2 28 S Diode Forward Voltageb VSD IS =1.3 A, VGS =0 V Ch-1 0.7 1.1 V Diode Forward Voltageb VSD IS =1 A, VGS =0 V Ch-2 0.47 0.5 V Dynamica Total Gate Charge Q Ch-1 8.0 12 Total Gate Charge Qg Channel-1 Ch-2 15 23 Gate Source Charge Q Channel-1 VDS =15 V, VGS =5 V, ID =6.3 A Ch-1 1.75 nC Gate-Source Charge Qgs Channel-2 Ch-2 5.3 nC Gate Drain Charge Q d Channel 2 VDS =15 V, VGS =5 V, ID =--10 A Ch-1 3.2 Gate-Drain Charge Qgd Ch-2 4.6 Gate Resistance R Ch-1 1.5 3.1 Ω Gate Resistance Rg Ch-2 0.5 2.6 Ω Turn On Delay Time td( ) Ch-1 10 20 Turn-On Delay Time td(on) Channel 1 Ch-2 15 30 Rise Time t Channel-1 VDD =15 V,RL =15 Ω Ch-1 5 10 Rise Time tr VDD = 15 V, RL = 15 Ω ID ≅ 1A,VGEN =10 V,Rg =6 Ω Ch-2 5 10 Turn Off Delay Time td( ff) g Channel-2 Ch-1 26 50 ns Turn-Off Delay Time td(off) Channel 2 VDD =15 V,RL =15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Ch-2 44 80 ns Fall Time tf ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Ch-1 8 16 Fall Time tf Ch-2 12 24 Source Drain Reverse Recovery Time t IF = 1.3 A, di/dt = 100 A/ms Ch-1 30 60 Source-Drain Reverse Recovery Time trr IF = 2.2 A, di/dt = 100 mA/ms Ch-2 32 70 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. SCHOTTKY SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage Drop VF IF =1.0 A 0.47 0.50 V Forward Voltage Drop VF IF =1.0 A, TJ = 125_C 0.36 0.42 V Vr =30 V 0.004 0.100 Maximum Reverse Leakage Current Irm Vr =30 V,TJ = 100_C 0.7 10 mA a u e e se ea age Cu e t rm Vr =--30 V, TJ = 125_C 3.0 20 Junction Capacitance CT Vr =10 V 50 pF |
Аналогичный номер детали - SI4816DY-E3 |
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Аналогичное описание - SI4816DY-E3 |
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