SI4967DY-T1 datasheet(1/4 Pages) VISHAY

номер детали	SI4967DY-T1

подробное описание детали	Dual P-Channel 1.8-V (G-S) MOSFET

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Si4967DY

Vishay Siliconix

Document Number: 70813

S-31989—Rev. C, 13-Oct-03

www.vishay.com

1

Dual P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.023 @ VGS = -4.5 V

-7.5

-12

0.030 @ VGS = -2.5 V

-6.7

0.045 @ VGS = -1.8 V

-5.4

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

S1

G1

D1 D1

P-Channel MOSFET

S2

G2

D2 D2

P-Channel MOSFET

Ordering Information: Si4967DY

Si4967DY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-12

V

Gate-Source Voltage

VGS

"8

V

Continuous Drain Current (TJ = 150_C)a, b

TA = 25_C

ID

-7.5

Continuous Drain Current (TJ = 150_C)a, b

TA = 70_C

ID

-6.1

A

Pulsed Drain Current

IDM

-30

A

Continuous Source Current (Diode Conduction)a, b

IS

-1.7

Maximum Power Dissipationa, b

TA = 25_C

PD

2.0

W

Maximum Power Dissipationa, b

TA = 70_C

PD

1.3

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction to Ambienta

t v 10 sec

R

62.5

_C/W

Maximum Junction-to-Ambienta

Steady State

RthJA

93

_C/W

Notes

a.

Surface Mounted on FR4 Board.

b.

t v10 sec.

Аналогичный номер детали - SI4967DY-T1

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4967DY	103Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI4967DY	103Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022

More results

Аналогичное описание - SI4967DY-T1

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI6973DQ	66Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 22-May-00
	SI4965DY	62Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. B, 13-Oct-03
	SI5935DC	73Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 16-Jun-03
	SI5935DC-T1-E3	233Kb / 10P	Dual P-Channel 1.8 V (G-S) MOSFET Rev. C, 19-Apr-10
Guangdong Kexin Industr...	KI5935DC	66Kb / 2P	Dual P-Channel 1.8-V (G-S) MOSFET
Vishay Siliconix	SI6967DQ-T1-E3	216Kb / 10P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. D, 02-Jun-08
	SI4967DY	103Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022
	SI5905DC	112Kb / 5P	Dual P-Channel 1.8 V (G-S) MOSFET
	SI1905DL	57Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Nov-99
	SI1907DL	202Kb / 3P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. B, 28-Feb-05

More results

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