MC100EP01DTR2G datasheet(5/10 Pages) ONSEMI

номер детали	MC100EP01DTR2G

подробное описание детали	V ECL 4-Input OR/NOR

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MC10EP01, MC100EP01

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Table 8. 100EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1))

Symbol

Characteristic

−40°C

25°C

85°C

Unit

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

IEE

Power Supply Current

15

24

32

17

26

36

19

28

38

mA

VOH

Output HIGH Voltage (Note 2)

2155

2280

2405

2155

2280

2405

2155

2280

2405

mV

VOL

Output LOW Voltage (Note 2)

1355

1480

1605

1355

1480

1605

1355

1480

1605

mV

VIH

Input HIGH Voltage (Single-Ended)

2075

2420

2075

2420

2075

2420

mV

VIL

Input LOW Voltage (Single-Ended)

1355

1675

1355

1675

1355

1675

mV

IIH

Input HIGH Current

150

mA

IIL

Input LOW Current

0.5

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V.

2. All loading with 50 W to VCC − 2.0 V.

Table 9. 100EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1))

Symbol

Characteristic

−40°C

25°C

85°C

Unit

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

IEE

Power Supply Current

15

24

32

17

26

36

19

28

38

mA

VOH

Output HIGH Voltage (Note 2)

3855

3980

4105

3855

3980

4105

3855

3980

4105

mV

VOL

Output LOW Voltage (Note 2)

3055

3180

3305

3055

3180

3305

3055

3180

3305

mV

VIH

Input HIGH Voltage (Single-Ended)

3775

4120

3775

4120

3775

4120

mV

VIL

Input LOW Voltage (Single-Ended)

3055

3375

3055

3375

3055

3375

mV

IIH

Input HIGH Current

150

mA

IIL

Input LOW Current

0.5

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V.

2. All loading with 50 W to VCC − 2.0 V.

Table 10. 100EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1))

Symbol

Characteristic

−40°C

25°C

85°C

Unit

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

IEE

Power Supply Current

15

24

32

17

26

36

19

28

38

mA

VOH

Output HIGH Voltage (Note 2)

−1145 −1020

−895

−1145 −1020

−895

−1145 −1020

−895

mV

VOL

Output LOW Voltage (Note 2)

−1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695

mV

VIH

Input HIGH Voltage (Single-Ended)

−1225

−880

−1225

−880

−1225

−880

mV

VIL

Input LOW Voltage (Single-Ended)

−1945

−1625 −1945

−1625

mV

IIH

Input HIGH Current

150

mA

IIL

Input LOW Current

0.5

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

1. Input and output parameters vary 1:1 with VCC.

2. All loading with 50 W to VCC − 2.0 V.

Аналогичный номер детали - MC100EP01DTR2G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MC100EP01DTR2G	156Kb / 10P	3.3V / 5V ECL 4?묲nput OR/NOR December, 2006 ??Rev. 8

More results

Аналогичное описание - MC100EP01DTR2G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MC100LVEL01	155Kb / 6P	3.3 V ECL 4-Input OR/NOR July, 2016 ??Rev. 5
ON Semiconductor	MC10EL01	144Kb / 9P	5V ECL 4-Input OR/NOR December, 2006 ??Rev. 5
Arizona Microtek, Inc	AZ10EL01	73Kb / 6P	ECL/PECL 4-Input OR/NOR
ON Semiconductor	MC10EP01	83Kb / 10P	3.3V / 5V ECL 4-Input OR/NOR June, 2004 ??Rev. 6
	MC10EL01	156Kb / 7P	5V ECL 4?륤nput OR/NOR July, 2016 ??Rev. 7
	MC10E101	124Kb / 7P	5VECL Quad 4-Input OR/NOR Gate November, 2006 ??Rev. 8
	MC100LVEL01	134Kb / 7P	3.3V ECL 4?묲nput OR/NOR December, 2006 ??Rev. 3
	MC10E101	153Kb / 7P	5V ECL Quad 4?륤nput OR/NOR Gate July, 2016 ??Rev. 9
	MC10EL01	70Kb / 2P	4-Input OR/NOR 1996 REV 2
Micrel Semiconductor	SY10EL01	47Kb / 4P	4-INPUT OR/NOR

More results

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