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SI9912DY датащи(PDF) 1 Page - Vishay Siliconix |
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SI9912DY датащи(HTML) 1 Page - Vishay Siliconix |
1 / 8 page CBOOT Q1 VDC OUTPUT VDD IN Undervoltage GND Q2 − + VDD Level Shift OUTL OUTH SD VBBM BOOT D1 VS Si9912 Vishay Siliconix Document Number: 71311 S-40134—Rev. B, 16-Feb-04 www.vishay.com 1 Half-Bridge MOSFET Driver for Switching Power Supplies FEATURES APPLICATIONS D 4.5- to 5.5-V Operation D Undervoltage Lockout D 250-kHz to 1-MHz Switching Frequency D Shutdown Quiescent Current <5 mA D One Input PWM Signal Generates Both Drive D Bootstrapped High-Side Drive D Operates from 4.5- to 30-V Supply D TTL/CMOS Compatible Input Levels D 1-A Peak Drive Current D Break-Before-Make Circuit D Multiphase Desktop CPU Supplies D Single-Supply Synchronous Buck Converters D Mobile Computing CPU Core Power Converters D Standard-Synchronous Converters D High Frequency Switching Converters DESCRIPTION The Si9912 is a dual MOSFET high-speed driver with break-before-make. It is designed to operate in high frequency dc-dc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated with “floating” high-side gate drivers. Each driver is capable of switching a 3000-pF load with 60-ns propogation delay and 25-ns transition time. The Si9912 comes with an internal break-before-make feature to prevent shoot-through current in the external MOSFETs. A shutdown pin is used to enable the driver. When disabled, the quiescent current of the driver is less than 5 mA. The Si9912 is available in both standard and lead (Pb)-free, 8-pin SOIC packages for operation over the industrial operation range (−40_C to 85_C). FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE TRUTH TABLE VS SD IN VOUTL VOUTH L L L L L L L H L L L H L H L L H H L H H L L L L H L H L L H H L L L H H H L H |
Аналогичный номер детали - SI9912DY |
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Аналогичное описание - SI9912DY |
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