поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

IRF7342PBF датащи(PDF) 2 Page - Infineon Technologies AG

номер детали IRF7342PBF
подробное описание детали  Dual P Channel MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IRF7342PBF датащи(HTML) 2 Page - Infineon Technologies AG

  IRF7342PBF Datasheet HTML 1Page - Infineon Technologies AG IRF7342PBF Datasheet HTML 2Page - Infineon Technologies AG IRF7342PBF Datasheet HTML 3Page - Infineon Technologies AG IRF7342PBF Datasheet HTML 4Page - Infineon Technologies AG IRF7342PBF Datasheet HTML 5Page - Infineon Technologies AG IRF7342PBF Datasheet HTML 6Page - Infineon Technologies AG IRF7342PBF Datasheet HTML 7Page - Infineon Technologies AG IRF7342PBF Datasheet HTML 8Page - Infineon Technologies AG  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
 
IRF7342PbF
2
2016-5-26
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8)

ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ  150°C.
Pulse width
300µs; duty cycle  2%.
When mounted on 1" square copper board , t
10sec.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
VGS = 0V, ID = -250µA
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
––– -0.054 –––
V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.095 0.105

VGS = -10V, ID = -3.4A 
––– 0.150 0.170
VGS = -4.5V, ID = -2.7A 
VGS(th)
Gate Threshold Voltage
-1.0
–––
–––
V
VDS = VGS, ID = -250µA
gfs
Forward Trans conductance
3.3
–––
–––
S
VDS = -10V, ID = -3.1A
IDSS
Drain-to-Source Leakage Current
–––
–––
-2.0
µA
VDS = -55V, VGS = 0V
–––
–––
-25
VDS = -55V,VGS = 0V,TJ =55°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
-100
nA
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
26
38
nC  
ID = -3.1A
Qgs
Gate-to-Source Charge
–––
3.0
4.5
VDS = -44V
Qgd
Gate-to-Drain (‘Miller’) Charge
–––
8.4
13
VGS = -10V, See Fig.10 
td(on)
Turn-On Delay Time
–––
14
22
ns
VDD = -28V
tr
Rise Time
–––
10
15
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
43
64
RG = 6.0
tf
Fall Time
–––
22
32
RD = 16
Ciss
Input Capacitance
–––
690
–––
pF  
VGS = 0V
Coss
Output Capacitance
–––
210
–––
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
86
–––
ƒ = 1.0MHz, See Fig.9
Diode Characteristics  
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
-2.0
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
-27
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C,IS = -2.0A,VGS = 0V 
trr
Reverse Recovery Time
–––
54
80
ns TJ = 25°C ,IF = -2.0A,
Qrr
Reverse Recovery Charge
–––
85
130
nC
di/dt = 100A/µs 


Аналогичный номер детали - IRF7342PBF

производительномер деталидатащиподробное описание детали
logo
International Rectifier
IRF7342PBF IRF-IRF7342PBF Datasheet
159Kb / 7P
   HEXFET짰 Power MOSFET (VDSS = -55V , RDS(on) = 0.105廓)
IRF7342PBF IRF-IRF7342PBF Datasheet
164Kb / 7P
   Generation V Technology
IRF7342PBF IRF-IRF7342PBF Datasheet
164Kb / 7P
   Generation V Technology
IRF7342PBF-1 IRF-IRF7342PBF-1 Datasheet
184Kb / 7P
   Industry-standard pinout SO-8 Package
IRF7342PBF-1 IRF-IRF7342PBF-1_15 Datasheet
184Kb / 7P
   Industry-standard pinout SO-8 Package
More results

Аналогичное описание - IRF7342PBF

производительномер деталидатащиподробное описание детали
logo
Guangdong Kexin Industr...
AO6801A-HF KEXIN-AO6801A-HF Datasheet
1Mb / 4P
   Dual P-Channel MOSFET
logo
ELM Electronics
ELM57801GA-S ELM-ELM57801GA-S Datasheet
1Mb / 5P
   Dual P-channel MOSFET
ELM34803AA-N ELM-ELM34803AA-N Datasheet
1Mb / 4P
   Dual P-channel MOSFET
logo
ELM Technology Corporat...
ELM18807BA-S ELM-TECH-ELM18807BA-S Datasheet
393Kb / 4P
   Dual P-channel MOSFET
ELM14813AA-N ELM-TECH-ELM14813AA-N Datasheet
96Kb / 4P
   Dual P-channel MOSFET
logo
Guangdong Kexin Industr...
AO4817-HF KEXIN-AO4817-HF Datasheet
1Mb / 4P
   Dual P-Channel MOSFET
AO4821 KEXIN-AO4821 Datasheet
1Mb / 4P
   Dual P-Channel MOSFET
AO4807 KEXIN-AO4807 Datasheet
2Mb / 5P
   Dual P-Channel MOSFET
logo
Taiwan Semiconductor Co...
TSM680P06D TSC-TSM680P06D Datasheet
461Kb / 6P
   Dual P-Channel MOSFET
logo
Guangdong Kexin Industr...
AO4801A-HF KEXIN-AO4801A-HF Datasheet
1Mb / 4P
   Dual P-Channel MOSFET
logo
Guangdong Youtai Semico...
AO4805 UMW-AO4805 Datasheet
508Kb / 6P
   Dual P-Channel MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com