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IRF7342PBF датащи(PDF) 2 Page - Infineon Technologies AG |
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IRF7342PBF датащи(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page IRF7342PbF 2 2016-5-26 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8) ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C. Pulse width 300µs; duty cycle 2%. When mounted on 1" square copper board , t 10sec. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.095 0.105 VGS = -10V, ID = -3.4A ––– 0.150 0.170 VGS = -4.5V, ID = -2.7A VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Trans conductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A IDSS Drain-to-Source Leakage Current ––– ––– -2.0 µA VDS = -55V, VGS = 0V ––– ––– -25 VDS = -55V,VGS = 0V,TJ =55°C IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 26 38 nC ID = -3.1A Qgs Gate-to-Source Charge ––– 3.0 4.5 VDS = -44V Qgd Gate-to-Drain (‘Miller’) Charge ––– 8.4 13 VGS = -10V, See Fig.10 td(on) Turn-On Delay Time ––– 14 22 ns VDD = -28V tr Rise Time ––– 10 15 ID = -1.0A td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0 tf Fall Time ––– 22 32 RD = 16 Ciss Input Capacitance ––– 690 ––– pF VGS = 0V Coss Output Capacitance ––– 210 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig.9 Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– -2.0 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– -27 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C,IS = -2.0A,VGS = 0V trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C ,IF = -2.0A, Qrr Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs |
Аналогичный номер детали - IRF7342PBF |
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Аналогичное описание - IRF7342PBF |
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