поискавой системы для электроныых деталей |
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2SA1222 датащи(PDF) 1 Page - NEC |
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2SA1222 датащи(HTML) 1 Page - NEC |
1 / 4 page 1998 © Document No. D16143EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS DATA SHEET 2002 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. FEATURES • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −160 V Collector to emitter voltage VCEO −140/–160 V Emitter to base voltage VEBO −5.0 V Collector current (DC) IC(DC) −500 mA Collector current (pulse) IC(pulse)* −1.0 A Total power dissipation PT 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C *PW ≤ 10 ms, duty cycle ≤ 50% PACKAGE DRAWING (UNIT: mm) ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = −100 V, IE = 0 −200 nA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −200 nA DC current gain hFE ** VCE = −2.0 V, IC = −100 mA 100 150 400 DC base voltage VBE ** VCE = −5.0 V, IC = −20 mA −0.6 −0.64 −0.7 V Collector saturation voltage VCE(sat) ** IC = −1.0 A, IB = −0.2 A −0.6 −0.9 V Base saturation voltage VBE(sat) ** IC = −1.0 A, IB = −0.2 A −1.1 −0.3 V Output capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 24 40 pF Gain bandwidth product fT VCE = −10 V, IE = 20 mA 30 45 MHz ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed |
Аналогичный номер детали - 2SA1222 |
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Аналогичное описание - 2SA1222 |
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