SS3L45 datasheet(3/5 Pages) SMC

номер детали	SS3L45

подробное описание детали	Metal to sillicon rectifier, majority carrier conduction

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производитель	SMC [Sangdest Microelectronic (Nanjing) Co., Ltd]

домашняя страница	http://www.smc-diodes.com/

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Technical Data

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Data Sheet N1823 Rev. -

• China - Germany - Korea - Singapore - United States •

• http://www.smc-diodes.com - sales@ smc-diodes.com •

SS3L45

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Symbol

SS3L45

Unit

Marking Code

3L45

Maximum Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

VRRM

VDC

45

V

Maximum RMS Voltage

VRMS

31

V

Maximum Average Forward Rectified Current

IF(AV)

3.0

A

Peak Forward Surge Current

8.3ms Single Half Sine-wave Superimposed on Rated

Load (JEDEC Method)

IFSM

80

A

Maximum Instantaneous Forward Voltage(Note1)

@ IF = 3.0A

VF

0.45

V

Maximum DC Reverse Current @TA = 25°C

At Rated DC Blocking Voltage @TA = 100°C

IR

0.2

mA

100

Typical Thermal Resistance

RθJL

RθJA

17

55

°C/W

Operating Temperature Range

TJ

-55 to +125

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Note: 1. Pluse Test with PW=300usec, 1% Duty Cycle

Аналогичный номер детали - SS3L45

производитель	номер детали	датащи	подробное описание детали
SMC Diode Solutions Co....	SS3L45	395Kb / 4P	SS3L45 SCHOTTKY RECTIFIER Rev. A

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Аналогичное описание - SS3L45

производитель	номер детали	датащи	подробное описание детали
Guangdong Youtai Semico...	SS52	198Kb / 3P	Metal to silicon rectifier, majority carrier conduction.
Gaomi Xinghe Electronic...	MBR1030	377Kb / 2P	Metal of silicon rectifier , majority carrier conduction
Shenzhen Luguang Electr...	SS345FL	1Mb / 2P	Metal silicon junction, majority carrier conduction
Kersemi Electronic Co.,...	MBR10H60	1Mb / 3P	Metal silicon junction, majority carrier conduction
Sangdest Microelectroni...	1N5817W	135Kb / 4P	Metal silicon junction, majority carrier conduction
Taiwan Semiconductor Co...	MBR20200PT	103Kb / 2P	Metal silicon junction, majority carrier conduction
Gaomi Xinghe Electronic...	B5817W	300Kb / 3P	Low stored change,majority carrier conduction.
Shanghai Leiditech Elec...	B5817W	790Kb / 3P	Low stored change,majority carrier conduction.
Shanghai Leiditech Elec...	RB160M-30	587Kb / 3P	Low stored change,majority carrier conduction.
SHIKUES Electronics	B5817WS	2Mb / 4P	Extremely low, Low stored change, Majority carrier conduction

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