SI3529DV datasheet(4/12 Pages) VISHAY

номер детали	SI3529DV

подробное описание детали	N- and P-Channel 40-V (D-S) MOSFET

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Document Number: 73455

S09-2277-Rev. C, 02-Nov-09

Vishay Siliconix

Si3529DV

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

VGS = 10 V thru 5 V

4 V

VDS - Drain-to-Source Voltage (V)

3 V

0.00

0.05

0.10

0.15

0.20

0.25

0

2468

10

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0

2

4

6

8

10

0

1234

5

Qg - Total Gate Charge (nC)

VDS = 20 V

VDS = 32 V

ID = 2.25 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

0

1234

5

25 °C

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

0

70

140

210

280

0

8

16

24

32

40

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 10 V

ID = 2.2 A

Аналогичный номер детали - SI3529DV

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI3529DV	150Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI3529DV	150Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET 01-Jan-2022

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Аналогичное описание - SI3529DV

производитель	номер детали	датащи	подробное описание детали
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Vishay Siliconix	SI4561DY	141Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET 01-Jan-2022
	73224	87Kb / 8P	N- and P-Channel 40-V (D-S) MOSFET Rev. A, 17-Jan-05
	SI4564DY	154Kb / 12P	N- and P-Channel 40 V (D-S) MOSFET Rev. B, 22-Feb-10
	SI4563DY	135Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET Rev. C, 09-Mar-09

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Аналогичный номер детали - SI3529DV

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