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IRF6894MTRPbF датащи(PDF) 1 Page - Infineon Technologies AG

номер детали IRF6894MTRPbF
подробное описание детали  HEXFET짰 Power MOSFET plus Schottky Diode?
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IRF6894MTRPbF датащи(HTML) 1 Page - Infineon Technologies AG

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Base part number  
Standard Pack
Orderable Part Number
Form
Quantity
IRF6894MTRPbF
DirectFET® Medium Can
Tape and Reel
4800
IRF6894MTRPbF
Package Type  
Fig 1. Typical On-Resistance vs. Gate Voltage
DirectFET™ ISOMETRIC
 
 
MX
VDSS
VGS
RDS(on)
RDS(on)
25V min
±16V max
0.9m
@ 10V
1.4m
@ 4.5V
Applicable DirectFET
™ Outline and Substrate Outline (see p.7,8 for details)  
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETpackaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFETpackage is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFETpackage allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce
both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
25
VGS
Gate-to-Source Voltage
±16
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
37
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
29
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
163
IDM
Pulsed Drain Current
296
EAS
Single Pulse Avalanche Energy 
540
mJ
IAR
Avalanche Current 
30
A
V  
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET™ Website.
Surface mounted on 1 in. square Cu board, steady state.
 
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.2mH, RG = 50, IAS = 30A.
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6894MPbF
IRF6894MTRPbF
Typical values (unless otherwise specified)
HEXFET® Power MOSFET plus Schottky Diode
Qg tot
Qgd
Qgs2
Qrr
Qoss
Vgs(th)
31nC
10nC
3.0nC
58nC
33nC
1.6V

RoHs Compliant Containing No Lead and Bromide 

Integrated Monolithic Schottky Diode

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible 

Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for Sync. FET socket of Sync. Buck Converter

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques 

100% Rg tested

Footprint compatible to DirectFET
DD
G
S
S
1
2016-10-13
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
ID = 37A
TJ = 25°C
TJ = 125°C
0
10203040
50
60
7080
90
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
VDS= 20V
VDS= 13V
VDS= 5V
ID= 30A


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