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IRF6894MTRPbF датащи(PDF) 1 Page - Infineon Technologies AG |
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IRF6894MTRPbF датащи(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page Base part number Standard Pack Orderable Part Number Form Quantity IRF6894MTRPbF DirectFET® Medium Can Tape and Reel 4800 IRF6894MTRPbF Package Type Fig 1. Typical On-Resistance vs. Gate Voltage DirectFET™ ISOMETRIC MX VDSS VGS RDS(on) RDS(on) 25V min ±16V max 0.9m @ 10V 1.4m @ 4.5V Applicable DirectFET ™ Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 25 VGS Gate-to-Source Voltage ±16 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 37 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 29 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 163 IDM Pulsed Drain Current 296 EAS Single Pulse Avalanche Energy 540 mJ IAR Avalanche Current 30 A V Notes Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET™ Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.2mH, RG = 50, IAS = 30A. Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage IRF6894MPbF IRF6894MTRPbF Typical values (unless otherwise specified) HEXFET® Power MOSFET plus Schottky Diode Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 31nC 10nC 3.0nC 58nC 33nC 1.6V RoHs Compliant Containing No Lead and Bromide Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) Dual Sided Cooling Compatible Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET DD G S S 1 2016-10-13 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 0.0 1.0 2.0 3.0 4.0 ID = 37A TJ = 25°C TJ = 125°C 0 10203040 50 60 7080 90 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 14 VDS= 20V VDS= 13V VDS= 5V ID= 30A |
Аналогичный номер детали - IRF6894MTRPbF |
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Аналогичное описание - IRF6894MTRPbF |
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