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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFB20N50K датащи(PDF) 1 Page - International Rectifier |
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IRFB20N50K датащи(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRFB20N50K 4/2/02 www.irf.com 1 SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) typ. ID 500V 0.21 Ω 20A Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 80 PD @TC = 25°C Power Dissipation 280 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 6.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 N Absolute Maximum Ratings TO-220AB l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low RDS(on) Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 330 mJ IAR Avalanche Current ––– 20 A EAR Repetitive Avalanche Energy ––– 28 mJ Avalanche Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 58 Thermal Resistance PD - 94418 |
Аналогичный номер детали - IRFB20N50K |
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Аналогичное описание - IRFB20N50K |
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