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STGF4M65DF2 датащи(PDF) 5 Page - STMicroelectronics |
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STGF4M65DF2 датащи(HTML) 5 Page - STMicroelectronics |
5 / 16 page STGF4M65DF2 Electrical characteristics DocID028678 Rev 4 5/16 Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω (see Figure 29: " Test circuit for inductive load switching") 12 - ns tr Current rise time 6.9 - ns (di/dt)on Turn-on current slope 480 - A/µs td(off) Turn-off-delay time 86 - ns tf Current fall time 120 - ns Eon(1) Turn-on switching energy 0.040 - mJ Eoff(2) Turn-off switching energy 0.136 - mJ Ets Total switching energy 0.176 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") 11.6 - ns tr Current rise time 8 - ns (di/dt)on Turn-on current slope 410 - A/µs td(off) Turn-off-delay time 85 - ns tf Current fall time 211 - ns Eon(1) Turn-on switching energy 0.067 - mJ Eoff(2) Turn-off switching energy 0.210 - mJ Ets Total switching energy 0.277 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 4 A, VR = 400 V, VGE = 15 V, di/dt = 800 A/µs (see Figure 29: " Test circuit for inductive load switching") - 133 - ns Qrr Reverse recovery charge - 140 - nC Irrm Reverse recovery current - 5 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 520 - A/µs Err Reverse recovery energy - 15 - µJ trr Reverse recovery time IF = 4 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 800 A/µs (see Figure 29: " Test circuit for inductive load switching") - 236 - ns Qrr Reverse recovery charge - 370 - nC Irrm Reverse recovery current - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 378 - A/µs Err Reverse recovery energy - 32 - µJ |
Аналогичный номер детали - STGF4M65DF2 |
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Аналогичное описание - STGF4M65DF2 |
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