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TPC8303 датащи(PDF) 1 Page - Toshiba Semiconductor |
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TPC8303 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8303 2002-04-18 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8303 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −4.5 Drain current Pulse (Note 1) IDP −18 A Single-device operation (Note 3a) PD (1) 1.5 Drain power dissipation (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) PD(2) 1.0 W Single-device operation (Note 3a) PD (1) 0.75 Drain power dissipation (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.45 W Single pulse avalanche energy (Note 4) EAS 26 mJ Avalanche current IAR −4.5 A Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) EAR 0.10 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.08 g (typ.) Circuit Configuration |
Аналогичный номер детали - TPC8303 |
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Аналогичное описание - TPC8303 |
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